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Thursday, April 30, 2020 | History

2 edition of study of the radiation damage resulting from the implantation of molecular ions. found in the catalog.

study of the radiation damage resulting from the implantation of molecular ions.

David George Beanland

study of the radiation damage resulting from the implantation of molecular ions.

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Published by Universityof Salford in Salford .
Written in English


Edition Notes

PhD thesis, Electrical Engineering.

SeriesD22025/78
ID Numbers
Open LibraryOL20905775M

  Electron scavenging to mimic radiation damage New study could help unveil negative effect of radiation on biological tissues due to better understanding of low energy electron-induced reactions Date. as normal cells in repairing the damage caused by radiation treatment resulting in differential cancer cell killing [10]. Radiation can be given with the intent of cure as well as being used as a very effective modality of pal-liative treatment to relieve patients from symptoms caused by the cancer. Further indications of radiation. @article{osti_, title = {Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si}, author = {Karabeshkin, K. V., E-mail: [email protected] and Karaseov, P. A. and Titov, A. I.}, abstractNote = {The depth distributions of structural damage induced in Si at room . Abstract. Ferritic/martensitic alloys are required for advanced reactor components to survive e neutroninduced dpa. Ion-induced void swelling of ferritic/martensitic alloy T91 in the quenched and tempered condition has been studied using a defocused, non-rastered MeV Fe-ion beam at C to produce damage levels up to peak displacements per atom (dpa).

In nuclear and materials physics, stopping power is the retarding force acting on charged particles, typically alpha and beta particles, due to interaction with matter, resulting in loss of particle energy. Its application is important in areas such as radiation protection, ion implantation and nuclear medicine.


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study of the radiation damage resulting from the implantation of molecular ions. by David George Beanland Download PDF EPUB FB2

The Monte Carlo simulation code SRIM was adopted to simulate the distributions of the implanted ions, the induced zinc and oxygen vacancies and the resulting interstitials. A common radiation damage parameter, known as the atomic displacements per atom (dpa), was study of the radiation damage resulting from the implantation of molecular ions.

book to quantify the primary radiation damage by: 2. Abstract. Radiation damage produced by room temperature ion implantation into single crystal A l 2 O 3 has been studied by a combination of optical absorption spectroscopy, Rutherford backscattering-channeling (RBC) and channeled proton-induced x-ray (CPIX) measurements.

For implantations with light ions, optical absorption at nm is a linear function of fluence below Cited by: 3. Results of an investigation of the lattice disorder resulting from equal atom dose implants of molecular and atomic ions in Si and Ge are presented. In each case, the molecular ion implants had the same energy per atom and were performed at the same atomic flux and fluence as the atomic ion by: The use of study of the radiation damage resulting from the implantation of molecular ions.

book ions to create a damaged microstructure followed by dual ion irradiation with nickel and helium resulted in the highest amount of swelling compared with dual ion (Ni + He) or single ion irradiation (Ni) separately.

Hydrogen has been shown to modify the irradiated microstructure. Zhanbing et by: 9. Focused Ion Implantation, IBIEC: Ion Beam Induced Epitaxial Crystallization, IBIA: Ion Beam Induced Amorphization In the case of "regular" implantation, ions hit the same area on a scale of seconds.

This means that damage accumulation for low temperature implantation takes place through independent events. Gamma radiation releases hydrogen and consequently leads to cross-linking of the polymer.

It also increases the electrical conductivity and optical density due to cross-linking and creation of double and triple bonds. The second effect is degradation which can be observed by the breakage of polymer macromolecules and molecular weight : A.

Kosińska, J. Jagielski, M. Wilczopolska, D.M. Bieliński, M. Okraska, I. Jóźwik, Ł. Kurpaska, K. the issues of ultra-low energy ion implantation, is discussed in this paper.

Boron profiles in silicon wafers implanted with keV B+ ions are measured. The observed profile agrees with TRIM simulation very well. Molecular effect in ion implantation is investigated for 6-keV As2 +.

It is shown that the radiation damage created by 6-keV As 2 + ion. This chapter provides an introduction to radiation chemistry, which is the science of the chemical effects brought about by the absorption of ionizing radiation in matter.

The study of the radiation chemistry may be viewed from three directions: life, industry, and basic knowledge.

Radiation damage to various polymers [1–12] due to irradiation by either fast ions or energetic neutrons or high energy photons is a topic of practical and theoretical interest. Theoretical effort aims to understand [ 1 – 3 ] topics like the relative contribution of crosslinking and chain scission to the damage and the detailed mechanisms Cited by: For radiation protection, high-LET radiation is of greatest concern when a radionuclide has been implanted, ingested, injected, or inhaled because: a.

Only single-strand breaks in DNA are possible b. The potential exists for repairable damage of single-strand breaks in DNA c. He + implantation was performed on the bulk samples with energy of keV using a NEC kV implanter. The implantation lasted for min and the ion fluence is study of the radiation damage resulting from the implantation of molecular ions.

book × 10 17 ions/cm 2 (corresponding to a dpa rate of × 10 −4 dpa/s). The thin-foil samples were implanted to a fluence of 5 × 10 17 ions/cm 2 in order to achieve a similar damage level as the bulk sample Author: Ruo-Yao Zheng, Wei-Zhong Han.

under the influence of radiation damage. Kr ( keV) ions were implanted into 6H-SiC at three different temperatures, i.e. room temperature, oC and oC, up to a fluence of 2×10 16 ions/cm 2. The radiation damage retained after implantation was assessed with the Rutherford. Ion implantation in nanodiamonds: size effect and energy dependence SRIM as a measure of the damage, we estimate that only ions with a mass equal to or greater than that of Kr (84 amu) can Cited by: 7.

Ultra high molecular weight polyethylene (UHMW-PE) is used extensively in hip and knee endoprostheses. Radiation damage from the sterilization of these endoprostheses prior to surgical insertion results in polymer crosslinking and decreased oxidative stability. Kr ( keV) ions were implanted into 6H-SiC at three different temperatures, i.e.

room temperature, oC and oC, up to a fluence of 2× ions/cm2. The radiation damage retained after implantation was assessed with the Rutherford backscattering technique in the channelling mode (RBS-C).Author: C.M.

Mabena. direct action, biologic damage occurs as a result of ionization of atoms on essential molecules that may potentially cause these molecules to become inactive or functionally altered.

indirect action refers to the effect produced by the effect produced by free radicals that are created by the interaction of radiation with water (H2O) MOLECULES. Significance: The detrimental effects of ionizing radiation (IR) involve a highly orchestrated series of events that are amplified by endogenous signaling and culminating in oxidative damage to DNA, lipids, proteins, and many metabolites.

Despite the global impact of IR, the molecular mechanisms underlying tissue damage reveal that many biomolecules are Cited by: The in situ implantation study was performed at MIAMI facility [3].

Xe ion energies of 6 and 40 keV were employed. The ion energies al-lowed investigation of various rates of defects introduction by the transmitted ions. Molecular dynamics calculations are performed using completely independent approaches: EDIP and LAMMPS Molecular Dynamics.

Radiation damage in diamond has been studied for many years using ion implantation and to a lesser extent, computer simulation. One of the fundamental questions is the process by which defects are created and the vacancy concentration threshold above which diamond amorphizes and/or forms graphitic-like domains.

Experimental studies ofCited by:   The features of the cascade of atomic collisions, the spatial distribution of dopes, and primary radiation damage in a near-surface region of cubic silicon carbide under bombardment by Si N ions and clusters (N = 1, 5, and 60) in the case of the same energy per one atom of the particle-projectile ( and eV/atom) are studied in this paper.

The study is Cited by: 2. ION BEAM APPLICATIONS IN SURFACE AND BULK MODIFICATION OF INSULATORS IAEA, VIENNA, Si ion implantation in ultra-high-molecular- ions to create radiation damage in materials which can be used for new applications. The associated ion implantation mechanisme of refractive index change is happens due radiation damage in single crystalline matrix at the end of the ion track ~nuclear stopping region of the crystal.

biologic tissues that usually can be reversed by repair enzymes. High LET radiation (alpha particles, ions of heavy nuclei, and low energy neutrons) can cause. irreparable damage to deoxyribonucleic acid (DNA) because multiple strand breaks in DNA that cannot be undone by repair enzymes may result.

In situ observation is of great value in the study of radiation damage utilizing electron or ion irradiation.

We summarize the facilities and give examples of work found around the world. Hence, the amount of stable post-implantation disorder in the bulk can be predicted based on ballistic calculations.

In contrast, the cascade density affects radiation damage in the near-surface region. An intermediate defect peak between the expected surface and bulk peaks of disorder forms for ion irradiation conditions with dense cascades.

In book: Ion Implantation Science and Technology "mass overlaps" resulting from various molecular ion breakup and charge exchange events resulting from collisions with residual gases, (2.

The topology of the damage resulting from irradiation of a crystal with low- or high-energy ions is schematically represented in Figure 1. For slow ions (i.e., below ~10 KeV/u), the basic process of ion energy loss is the direct transfer of energy to the atoms of the solid by elastic collisions between the projectile and the target nuclei ().Cited by:   Male genital system and EMFs.

The destructive effects of EMFs on both genders were studied at different exposures ().Since the reproductive system is controlled by the nervous and endocrine systems, environmental pollutants, such as EMFs, can affect the two systems mentioned above, so the genital system also is involved ().The studies on relationship Cited by: Without oxygen, damage produced by the indirect action of radiation of a biologic molecule may be repaired, but when damage occurs through an oxygen-mediated process, the end result is permanent, or fixed.

@article{osti_, title = {RBS-channeling study of radiation damage in Ar{sup +} implanted CuInSe{sub 2} crystals}, author = {Yakushev, Michael V., E-mail: [email protected] and Ural Federal University, Ekaterinburg and Institute of Solid State Chemistry of the Urals Branch of RAS, Ekaterinburg and Volkov, Vladimir.

Radiation is a physical agent, which is used to destroy cancer cells. The radiation used is called ionizing radiation because it forms ions (electrically charged particles) and deposits energy in the cells of the tissues it passes through.

This deposited energy can kill cancer cells or cause genetic changes resulting in cancer cell by: Blood disorder resulting form bone marrow failure after exposu The amount of energy transferred on average by incident radiat Two specific mechanisms of radiation in •X-rays strike tissues resulting in ionization.

• is produced X-radiation causes cell damage primarily through the formation Two specific. The unique ability of grain boundaries to act as effective sinks for radiation damage plays a significant role in nanocrystalline materials due to Cited by: 6.

As a result of severe radiation, the microstructure and mechanical properties of the materials can be significantly degraded as evidenced by void swelling, radiation hardening, embrittlement and Cited by: Radiation damage from the sterilization of these endoprostheses prior to surgical insertion results in polymer crosslinking and decreased oxidative stability.

The motivation for this study was to determine if UHMW-PE could be crosslinked by low dose proton irradiation with minimal radiation damage and its subsequent deleterious effects.

Irradiation-induced defect accumulation resulting in severe thermo-mechanical property degradation is expected. For this reason, and because of the lack of relevant fusion neutron sources, the fundamentals of tungsten radiation damage must be understood through coordinated mixed-spectrum fission reactor irradiation experiments and modeling.

In this work this bias was investigated by performing irradiation of Fe in thin foil and bulk form with ions of energies between 50 keV and keV using molecular dynamics simulations.

The damage resulting from the subsequent displacement cascades differs significantly between the two sample by: To elucidate this complex interplay between strain, irradiation damage and sputtering, we perform TRIM calculations and molecular dynamics simulations on silicon irradiated by Ga⁺ ions, with.

The application of the field-ion microscope (FIM) and the atom-probe FIM techniques to the study of radiation damage in metals is reviewed.

The FIM research in the following three areas is discussed: (1) the defect structure of the primary state of irradiated metals; (2) the recovery behavior in Stages I, II and III of irradiated body-centered and face-centered cubic metals Cited by: Everyone is exposed to ionizing radiation.

Approximately 82% of this exposure is natural background from cosmic and terrestrial sources, and 18% is due to man-made sources. Public exposure to ionizing radiation or contamination of the environment by radioactivity engenders intense fear.

The emotional and psychologic stresses resulting from exposure should be. Radiation damage of Pdf ions and H irradiated Tungsten – Some Experimental Results Presented by: Institute for Plasma Research, Gandhinagar, India Collaborators:Shishir Deshpande, S. Khirwadkar. @article{osti_, title = download pdf Implantation of Silicon Carbide}, author = {Hallen, Anders and Janson, Martin and Kuznetsov, A Y.

and Aberg, A and Linnarsson, M K. and Svensson, B G. and Persson, P O. and Carlsson, FH C. and Stirasta, L and Bergman, J P. and Sridhara, S G. and Zhang, Yanwen}, abstractNote = {Ion implantation is an important .Challenges for the future include more detailed information about damage resulting from ion implantation, better understanding of point defect properties (equilibrium populations, diffusivities.